Memory of Intel 3D XPoint is enclosed converse

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Introduction: Intel and beautiful light rolled out 3D XPoint in August 2015, make technology of memory of first since going out 25 years new-style condition. 2016, intel releases the Optane brand that uses 3D XPoint technology to store product, make this technology most the new generation that appears on the market first is high-powered series of solid state hard disk. The researcher of TechInsights makes Cheng, unit structure and material have thorough analysis and research continuously in the light of what use the Intel Optane memory of XPoint technology. Intel (Intel) He Meiguang (Micron) rolled out 3D XPoint in August 2015, make technology of memory of first since going out 25 years new-style condition. 2016, intel releases the Optane brand that uses 3D XPoint technology to store product, make this technology most the new generation that appears on the market first is high-powered solid state hard disk (SSD) series. According to the data analysis of TechInsights, XPoint is one kind is not volatile memory (NVM) technology. Store according to noumenon (the change of Bulk) resistor, be united in wedlock but of stack cross reseau data to access array. Its price predicts will more dynamic RAM (DRAM) is lower, but prep above shines put. TechInsights obtained Intel Optane M recently.

2 80mm 16GB PCIe 3.

0 try to tear open solution, chip of memory of a 3D X-Point discovered in enclose. First business that this is Intel and beautiful light is used turn 3D Xpoint product. Of memory of Intel 3D X-Point enclose dimension for 241.

12mm2(17.

6mm X 13.

7mm) , include X-Point to write down body grain among them. Dimension of grain of this 3D X-Point is Mm2(16.

6mm X 12.

78mm) . Graph 1: Xpoint memory encloses with grain (16B) pursues (origin: Intel 3D XPoint, TechInsights) the further analysis of TechInsights is affirmatory, every grain of chip of memory of Intel Optane XPoint can store 128Gb, more current 2D stores with what business of 3D TLC NAND uses a product density slightly low, if pursue,1 is shown. Beautiful light (the density of every grain memory of Micron) 32L 3D FG CuA TLC NAND is 2.

28Gb/mm2, samSung (Samsung) 48L TLC V-NAND is 2.

57Gb/mm2, toshiba (Toshiba)/WD 48L BiCS TLC NAND is 2.

43Gb/mm2, and Hailishi (SK Hynix)36L P-BiCS MLC NAND is 1.

45Gb/mm2. By comparison, the memory density of the Optane XPoint of Intel is 0.

62Gb/mm2. Graph 2: Memory density is compared however, relatively at DRAM product, the memory density of 3D Xpoint is samer the DRAM product that uses 20nm technology is more expensive 4.

5 times, the 1xnm DDR4 tower above that also compares SamSung 3.

3 times. Xpoint memory product uses 20nm technology node, come true 0.

The unit dimension of 00176 μ M2, this is equivalent to the half of DRAM unit size. Because,this is but the memory of stack is unit, and 4F2 replaces 6F2 to be used at memory unit array to design. Graph 3: Video graph of SEM of X-point memory array and TEM we know, beautiful smooth 32L and product of 64L 3D NAND use framework of CuA (CMOS Under The Array) , state efficiency of its memory array is amounted to 85% , the efficiency of product of otherer 3D NAND (make an appointment with 60-70%) taller, for example the efficiency of SamSung 3D 48L V-NAND is 70.

0% . No less, XPoint memory array stores mediumly because package is located in a metal 4 with the metal 5 between, make the memory efficiency of grain can be achieved 91.

4% . In other words, all CMOS circuit, like driver, encoder, the line is accessed, this locality data and address control, all be located in as similar as the CuA framework of 3D NAND memory component lower part. The storage system efficiency that next graphs indicate to there is 3D NAND product on Intel XPoint and market is compared. Graph 4: The comparison of memory array efficiency as to the memory element in array of Intel XPoint memory, it is used in the metal 4 with the metal 5 between store / structure of stack of selector double deck, be in metal 4 on join connect of contact of a few selector. Storing package respect, had developed such as photograph to become unit of oxide of material, resistor, electric the bridge receives unit and magnetoresistive type RAM (the equipment such as MRAM) chooses plan. Among them, intel XPoint memory uses the photograph that is based on sulfur a group of things with common features to change thing to change material, and its remember body component to use germanium - antimonial - tellurium (Ge-Sb-Te) alloy layer, namely so called photograph changes memory (PCM) . Used a lot of switch component in selector respect, for example double carry child the transistor that accept a scale (BJT) or field effect transistor (FET) , diode and switch of two-way threshold value (OST) . Intel XPoint memory uses another kind of alloy that is based on sulfur a group of things with common features to change thing, the arsenic that adulteration is different from memory element (As) . The selector that this expresses to Intel XPoint memory is used is material of switch of a kind of two-way threshold value. Next, we are returned will thorough this component, seek the technology that provides innovation sex more. Graph 5 show along the double deck memory of line and character line / cross section of OTS selector component is video. OTS selector is not met outspread to the electrode intermediate or bottom electrode. Graph 5: Along the XPoint PCM/OTS cross section of line and character line (origin: Intel 3D XPoint, TechInsights) CNC Milling CNC Machining